mid-infrared gesn-based leds with sn content up to 16%
| Description | |
| Date | 2019 |
| Date | |
| Auteurs | Aubin,- J | Bertrand,- M | Calvo,- V | Casiez,- L | Chelnokov,- A | Chrétien,- J | Hartmann,- Jm | Khazaka,- R | Pauc,- N | Quintero,- A | Reboud,- V | Rodriguez,- P | Thai,- Qm | |
| Source | 11th International Conference on Group IV Photonics, GFP 2014 | |
| Résumé | We have grown by Reduced Pressure Chemical Vapor Deposition (RPCVD) vertical GeSn light-emitting diodes (LEDs) with (i) Sn content ranging from 6% to 16% and (ii) with or without SiGeSn barriers. Direct band-gap behaviors and activation energies of defects affecting emission efficiency of our different stacks were analyzed by temperature dependent electroluminescence measurements. A strong light emission enhancement was observed thanks to SiGeSn confinement barriers compared to reference samples. The electroluminescence intensity of Ge0.84Sn0.16 LEDs was increased by a factor 2 compared to that of Ge0.87Sn0.13 devices. This strong enhancement at room temperature is attributed to the increase of the splitting energy between gamma and L valleys for higher Sn content LEDs. © 2019 IEEE. |
| DOI | http://dx.doi.org/10.1109/GROUP4.2019.8853926 |
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